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California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6350EP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6350GP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6352GP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6353EP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6351GP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
Номер в каталоге(s) : NX6240GP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX6342EP
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
Номер в каталоге(s) : NX5330SA NX5330SA-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
Номер в каталоге(s) : NX7337BF-AA NX7337BF-AA-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Номер в каталоге(s) : NX7337BF-AA
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Номер в каталоге(s) : NX7337BJ-AA PL10757EJ01V0DS
Renesas Electronics
Renesas Electronics
Компоненты Описание : 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
Номер в каталоге(s) : NX7338BF-AA
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Номер в каталоге(s) : NX7339BB-AA
Renesas Electronics
Renesas Electronics
Компоненты Описание : LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Номер в каталоге(s) : NX7339BB-AA NX7339BB-AA-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Номер в каталоге(s) : NX7337BJ-AA
California Eastern Laboratories.
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
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